MT8VDDT6464HD Micron Semiconductor Products, MT8VDDT6464HD Datasheet - Page 22

• Manufacturer Part Number: MT8VDDT6464HD
• Description: (MT8VDDTxx64HD) 200-Pin DDR Sdram Sodimms
• Manufacturer: Micron Semiconductor Products

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DD8C16_32_64x64HDG_B.fm - Rev. B 7/03 EN
31. READs and WRITEs with auto precharge are not
32. Any positive glitch in the nominal voltage must be
33. Normal Output Drive Curves:
160
140
120
100
80
60
40
20
0
Figure 8: Pull-Down Characteristics
0.0
allowed to be issued until
fied prior to the internal precharge command
being issued.
less than 1/3 of the clock and not more than
+400mV or 2.9V maximum, whichever is less. Any
negative glitch must be less than 1/3 of the clock
cycle and not exceed either -300mV or 2.2V mini-
mum, whichever is more positive.
a. The full variation in driver pull-down current
b. The variation in driver pull-down current
c. The full variation in driver pull-up current from
d. The variation in driver pull-up current within
e. The full variation in the ratio of the maximum
from minimum to maximum process, tempera-
ture and voltage will lie within the outer
bounding lines of the V-I curve of Figure 8,
Pull-Down Characteristics.
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I curve
of Figure 8, Pull-Down Characteristics.
minimum to maximum process, temperature
and voltage will lie within the outer bounding
lines of the V-I curve of Figure 9, Pull-Up Char-
acteristics.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of Figure
9, Pull-Up Characteristics.
to minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0V, and
at the same voltage and temperature.
0.5
1.0
V
V
OUT
OUT
(V)
(V)
t
RAS(MIN) can be satis-
1.5
2.0
Minimum
2.5
22
34. Reduced Output Drive Curves:
-100
-120
-140
-160
-180
-200
-20
-40
-60
-80
0
0.0
f. The full variation in the ratio of the nominal
a. The full variation in driver pull-down current
b. The variation in driver pull-down current
c. The full variation in driver pull-up current from
d. The variation in driver pull-up current within
e. The full variation in the ratio of the maximum
f. The full variation in the ratio of the nominal
Figure 9: Pull-Up Characteristics
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pull-up to pull-down current should be unity
±10 percent, for device drain-to-source volt-
ages from 0.1V to 1.0V.
from minimum to maximum process, tempera-
ture and voltage will lie within the outer bound-
ing lines of the V-I curve of Figure 10, Reduced-
Drive Pull-Down Characteristics, on page 23.
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I curve
of Figure 10, Reduced-Drive Pull-Down Char-
acteristics, on page 23.
minimum to maximum process, temperature
and voltage will lie within the outer bounding
lines of the V-I curve of Figure 11, Reduced-
Drive Pull-Up Characteristics, on page 23.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of
Figure 11, Reduced-Drive Pull-Up Characteris-
tics, on page 23.
to minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0V, and
at the same voltage.
pull-up to pull-down current should be unity
±10 percent, for device drain-to-source volt-
ages from 0.1V to 1.0V.
0.5
200-PIN DDR SODIMM
1.0
V
DD
Q - V
©2003 Micron Technology, Inc. All rights reserved.
OUT
(V)
1.5
2.0
2.5