PBSS304NX NXP Semiconductors, PBSS304NX Datasheet
PBSS304NX
Manufacturer Part Number
PBSS304NX
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS304NX.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS304NX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PBSS304NXЈ¬115
Manufacturer:
NXP
Quantity:
4 000
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1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PX.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS304NX
60 V, 4.7 A NPN low V
Rev. 02 — 20 November 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Pulse test: t
Quick reference data
CEsat
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT89
FE
CEsat
) at high I
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
≤ 1 ms
= 200 mA
= 4 A;
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
37
Product data sheet
60
Max
4.7
9.4
53
Unit
V
A
A
mΩ
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