PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 8

• Manufacturer Part Number: PBSS304NX
• Description: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
PBSS304NX_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
CEsat
(V)
(Ω)
10
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
−1
−2
−3
−1
−2
1
2
1
10
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
10
10
10
10
(1)
(2)
(3)
2
2
10
10
006aaa607
3
006aaa610
3
I
(1)
(2)
(3)
I
C
C
(mA)
(mA)
Rev. 02 — 20 November 2009
10
10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
T
function of collector current; typical values
T
function of collector current; typical values
60 V, 4.7 A NPN low V
−1
C
C
C
−1
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
1
1
(1)
(2)
(3)
10
10
PBSS304NX
10
10
2
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
10
(BISS) transistor
006aaa608
006aaa612
3
(1)
(2)
(3)
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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