PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 9

• Manufacturer Part Number: PBSS304NX
• Description: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
8. Test information
PBSS304NX_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 12.5 V; I
oscilloscope
t
d
t
on
Rev. 02 — 20 November 2009
C
= 3 A; I
V
t
I
r
(probe)
450 Ω
Bon
= 0.15 A; I
R1
R2
R
Boff
B
V
BB
= −0.15 A
60 V, 4.7 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
(100 %)
Boff
s
t
off
PBSS304NX
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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