PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 9
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PBSS304NX
Manufacturer Part Number
PBSS304NX
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS304NX.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS304NX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PBSS304NXЈ¬115
Manufacturer:
NXP
Quantity:
4 000
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NXP Semiconductors
8. Test information
PBSS304NX_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 12.5 V; I
oscilloscope
t
d
t
on
Rev. 02 — 20 November 2009
C
= 3 A; I
V
t
I
r
(probe)
450 Ω
Bon
= 0.15 A; I
R1
R2
R
Boff
B
V
BB
= −0.15 A
60 V, 4.7 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
(100 %)
Boff
s
t
off
PBSS304NX
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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