PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 4

• Manufacturer Part Number: PBSS304NX
• Description: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
6. Thermal characteristics
PBSS304NX_2
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0.75
0.33
10
−4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
−3
Thermal characteristics
10
Rev. 02 — 20 November 2009
−2
10
−1
2
Conditions
in free air
O
3
, standard footprint.
60 V, 4.7 A NPN low V
1
[1]
[2]
[3]
10
Min
-
-
-
-
PBSS304NX
CEsat
Typ
-
-
-
-
10
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
p
006aaa557
(s)
Max
208
76
60
20
10
3
Unit
K/W
K/W
K/W
K/W
2
.
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