PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 7
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PBSS304NX
Manufacturer Part Number
PBSS304NX
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS304NX.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS304NX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PBSS304NXЈ¬115
Manufacturer:
NXP
Quantity:
4 000
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NXP Semiconductors
PBSS304NX_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
1.2
0.8
0.4
0
0
10
10
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= 2 V
= 2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
10
10
006aaa605
3
006aaa606
3
I
I
C
C
(mA)
(mA)
Rev. 02 — 20 November 2009
10
10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
1.2
0.8
0.4
14
12
10
8
6
4
2
0
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
60 V, 4.7 A NPN low V
−1
C
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
10
2
PBSS304NX
10
3
2
CEsat
I
B
© NXP B.V. 2009. All rights reserved.
10
(mA) = 250
(BISS) transistor
4
006aaa611
006aaa609
3
225
175
125
V
I
75
C
CE
(mA)
200
150
100
(V)
50
25
10
5
4
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