PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 3

• Manufacturer Part Number: PBSS304NX
• Description: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
• Manufacturer: NXP Semiconductors

www.DataSheet4U.com
NXP Semiconductors
5. Limiting values
PBSS304NX_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
C
CM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 20 November 2009
P
(W)
tot
2
2.5
2.0
1.5
1.0
0.5
O
0
3
−75
, standard footprint
(1)
(2)
(3)
−25
2
O
3
, standard footprint.
25
60 V, 4.7 A NPN low V
2
Conditions
open emitter
open base
open collector
single pulse;
t
T
p
amb
≤ 1 ms
75
≤ 25 °C
125
T
006aaa556
amb
(°C)
[1]
[2]
[3]
175
PBSS304NX
Min
-
-
-
-
-
-
-
-
-
−65
−65
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
60
60
5
4.7
9.4
0.6
1.65
2.1
150
+150
+150
Unit
V
V
V
A
A
W
W
W
°C
°C
°C
2
.
3 of 15