PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PBSS304NX
Manufacturer Part Number
PBSS304NX
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS304NX.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS304NX
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
PBSS304NXЈ¬115
Manufacturer:
NXP
Quantity:
4 000
www.DataSheet4U.com
NXP Semiconductors
5. Limiting values
PBSS304NX_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
C
CM
Fig 1.
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 20 November 2009
P
(W)
tot
2
2.5
2.0
1.5
1.0
0.5
O
0
3
−75
, standard footprint
(1)
(2)
(3)
−25
2
O
3
, standard footprint.
25
60 V, 4.7 A NPN low V
2
Conditions
open emitter
open base
open collector
single pulse;
t
T
p
amb
≤ 1 ms
75
≤ 25 °C
125
T
006aaa556
amb
(°C)
[1]
[2]
[3]
175
PBSS304NX
Min
-
-
-
-
-
-
-
-
-
−65
−65
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
60
60
5
4.7
9.4
0.6
1.65
2.1
150
+150
+150
Unit
V
V
V
A
A
W
W
W
°C
°C
°C
2
.
3 of 15