PBSS304NX NXP Semiconductors, PBSS304NX Datasheet - Page 5

• Manufacturer Part Number: PBSS304NX
• Description: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
PBSS304NX_2
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
−1
−1
1
1
2
10
2
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
δ = 1
0.50
0.20
0.10
0.05
0.02
0.01
0
0
0.75
0.33
0.75
0.33
10
10
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
10
10
2
Rev. 02 — 20 November 2009
−2
−2
10
10
−1
−1
60 V, 4.7 A NPN low V
1
1
10
10
PBSS304NX
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa558
006aaa559
(s)
(s)
10
10
3
3
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