nsc800 National Semiconductor Corporation, nsc800 Datasheet - Page 5

• Manufacturer Part Number: nsc800
• Description: Nsc800tm High-performance Low-power Cmos Microprocessor
• Manufacturer: National Semiconductor Corporation

T
T
T
T
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
INH
INS
NMI
RDH
RFLF
RL(MR)
S(AD)
S(ALE)
S(WD)
W(ALE)
WH
W(I)
W(INTA)
WL
W(RD)
W(RFSH)
WS
W(WAIT)
W(WR)
XCF
XCR
H(ADH)1
H(ADH)2
H(ADL)
H(WD)
4 0 AC Electrical Characteristics
Note 1 Test conditions t
Note 2 Output timings are measured with a purely capacitive load of 100 pF
A(8–15) Hold Time During
Opcode Fetch
A(8–15) Hold Time During
Memory or IO RD and WR
AD(0–7) Hold Time
Write Data Hold Time
Interrupt Hold Time
Interrupt Set-Up Time
Width of NMI Input
Data Hold after Read
RFSH Rising to ALE
Falling
RD Rising to ALE Rising
(Memory Read)
AD(0–7) Set-Up Time
A(8–15) SO SI IO M
Set-Up Time
Write Data Set-Up Time
ALE Width
WAIT Hold Time
Width of INTR RSTA-C
PS BREQ
INTA Strobe Width
WR Rising to ALE Rising
Read Strobe Width During
Opcode Fetch
Refresh Strobe Width
WAIT Set-Up Time
WAIT Input Width
Write Strobe Width
XIN to Clock Falling
XIN to Clock Rising
Parameter
e
1000 ns for NSC800-1 400 ns for NSC800 285 ns for NSC800-35 250 ns for NSC800-4
1000
1925
Min
400
100
400
100
390
300
350
385
430
500
450
960
100
550
985
NSC800-1
50
60
25
25
0
0
0
0
Max
100
85
Min
100
100
100
130
200
400
130
360
725
250
370
NSC800-3
60
50
30
50
45
70
75
70
15
15
0
0
0
0
V
CC
e
Max
95
85
5V
5
g
NSC800-35
Min
115
140
225
210
450
195
250
10% GND
85
35
85
50
25
45
50
45
55
35
70
60
0
0
0
0
5
5
Max
90
90
e
0V unless otherwise specified (Continued)
Min
100
125
200
185
395
175
220
NSC800-4
60
30
75
45
20
40
45
40
50
30
70
55
0
0
0
0
5
5
Max
80
80
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Add two t states for first
INTA of each interrupt
response string Add t for
each WAIT state
Add t for each WAIT
State Add t 2 for Memory
Read Cycles
Add t for each WAIT state
Notes