nsc800 National Semiconductor Corporation, nsc800 Datasheet - Page 72

• Manufacturer Part Number: nsc800
• Description: Nsc800tm High-performance Low-power Cmos Microprocessor
• Manufacturer: National Semiconductor Corporation

14 0 NSC800M 883B MIL-STD-833
Class C Screening
National Semiconductor offers the NSC800D and NSC800E
with full class B screening per MIL-STD-883 for Military
Aerospace programs requiring high reliability In addition
this screening is available for all of the key NSC800 periph-
eral devices
15 0 Burn-In Circuits
Internal Visual
Stabilization Bake
Temperature Cycling
Constant Acceleration
Fine Leak
Gross Leak
Burn-In
Final Electrical
PDA
QA Acceptance
Quality Conformance
External Visual
NSC800D 883B (Dual-In-Line)
Test
Top View
5240HR
All resistors 2 7 k
Note 1 All resistors are
Note 2 All clocks 0V to 3V 50% duty cycle in phase with
Note 3 Device to be cooled down under power after burn-in
TL C 5171–32
MIL-STD-883 Method Condition
2010B
1008 C 24 Hrs
1010 C 10 Cycles
2001 E 30 000 G’s Y1 Axis
1014 A or B
1014C
1015 160 Hrs
burn-in circuits shown below)
a
10% Max
a
b
a
5005
2009
unless marked otherwise
55 C AC and DC per RETS800X
25 C DC per RETS800X
125 C AC and DC per RETS800X
25 C AC per RETS800X
100% Screening Flow
W
g
5% unless otherwise specified
72
a
a
b
Electrical
RESTS800X which tests or guarantees all of the electrical
performance characteristics of the NSC800 data sheet A
copy of the current revision of RETS800X is available upon
request
125 C (using
150 C
65 C
a
NSC800E 883B (Leadless Chip Carrier)
150 C
testing
k
1 s rise and fall time
is
performed
5241HR
in
Requirement
Method 5005
Sample Per
accordance
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
100%
TL C 5171 – 33
with