mcf5307cft90b Freescale Semiconductor, Inc, mcf5307cft90b Datasheet - Page 245
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mcf5307cft90b
Manufacturer Part Number
mcf5307cft90b
Description
Mcf5307 Coldfire Integrated Microprocessor User
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MCF5307CFT90B.pdf
(484 pages)
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11.3.3.1 Non-Page-Mode Operation
In non-page mode, the simplest mode, the DRAM controller provides termination and runs
a separate bus cycle for each data transfer. Figure 11-5 shows a non-page-mode access in
which a DRAM read is followed by a write. Addresses for a new bus cycle are driven at the
rising clock edge.
For a DRAM block hit, the associated RAS is driven at the next falling edge. Here
DACRn[RCD] = 0, so the address is multiplexed at the next rising edge to provide the
column address. The required CAS signals are then driven at the next falling edge and
remain asserted for the period programmed in DACRn[CAS]. Here, DACRn[RNCN] = 1,
so it is precharged one clock before CAS is negated. On a read, data is sampled on the last
rising edge of the clock that CAS is valid.
RAS[1] or [0]
MCF5307 Address
Figure 11-5. Basic Non-Page-Mode Operation RCD = 0, RNCN = 1 (4-4-4-4)
CAS[3:0]
DRAMW
BCLKO
D[31:0]
A[31:0]
Pin
15
14
13
12
11
10
17
19
21
23
25
9
Table 11-9. DRAM Addressing for 32-Bit Wide Memories
Row
Chapter 11. Synchronous/Asynchronous DRAM Controller Module
MCF5307 Address Bit
Freescale Semiconductor, Inc.
DACRn[RCD] = 0
For More Information On This Product,
Driven for RAS
15
14
13
12
11
10
17
19
21
23
25
9
Go to: www.freescale.com
DACRn[CAS] = 01]
Column
DACRn[RNCN] = 1
MCF5307 Address Bit Driven
when CAS is Asserted
16
18
20
22
24
2
3
4
5
6
7
8
Asynchronous Operation
Base Memory Size of
Memory Size
256 Kbytes
16 Mbytes
64 Mbytes
64 Kbytes
4 Mbytes
1 Mbyte
11-11
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