adc12eu050eb National Semiconductor Corporation, adc12eu050eb Datasheet - Page 6

• Manufacturer Part Number: adc12eu050eb
• Description: Adc12eu050 Ultra-low Power, Octal, 12-bit, 40-50 Msps Sigma-delta Analog-to-digital Converter
• Manufacturer: National Semiconductor Corporation

www.national.com
Static Converter Characteristics
INL
DNL
PSE
NSE
GE
Dynamic Converter Characteristics – Instant Overload Recovery (IOR) Off
SNR
SINAD
ENOB
THD
Symbol
Absolute Maximum Ratings
3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Unless otherwise specified, the following conditions apply: V
= 5pF; 100Ω terminated at the receiver; f
apply for T
Supply Voltage (V
IO Supply Voltage (V
Voltage at Analog Inputs
Voltage at SPI Inputs
Input Current, V
Input Current, other pins
ESD Susceptibility
Soldering Temperature
Human Body Model
Machine Model
Charged Device Mode
Infrared, 10 seconds
Resolution (No missing codes
guaranteed)
Integral Non Linearity
Differential Non Linearity
Positive Full Scale Error
Negative Full Scale Error
Gain Error
Signal to Noise
Signal to Noise and
5)
Effective Number of Bits
Total Harmonic Distortion
A
= +25°C.
IN
+, V
A
, V
Parameter
DR
IN
D
Ratio(Note
)
-
)
Distortion(Note
5)
CLK
= 50MHz; f
−0.3V to 1.4V
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
f
(Note
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
-0.3 to 2.0V
-0.3 to 1.4V
-0.3 to 2.5V
= 50MHz, f
= 50MHz, f
= 40MHz, f
= 40MHz, f
= 50MHz, f
= 50MHz, f
= 40MHz, f
= 40MHz, f
= 50MHz, f
= 50MHz, f
= 40MHz, f
= 40MHz, f
= 50MHz, f
= 50MHz, f
= 40MHz, f
= 40MHz, f
±10mA
1,000V
2000V
235°C
1,
±1mA
200V
Note
S
= 50MSPS. Boldface limits apply for T
A
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
= V
Conditions
6
= 4.4MHz, V
= 9.5MHz, V
= 4.4MHz, V
= 9.5MHz, V
= 4.4MHz, V
= 9.5MHz, V
= 4.4MHz, V
= 9.5MHz, V
= 4.4MHz, V
= 9.5MHz, V
= 4.4MHz, V
= 9.5MHz, V
= 4.4MHz, V
= 9.5MHz, V
= 4.4MHz, V
= 9.5MHz, V
D
= 1.2V; V
Operating Ratings
Storage Temperature Range
Soldering process must comply with National
Semiconductor's Reflow Temperature Profile
specifications. Refer to www.national.com/packaging.
Operating Temperature Range
Supply Voltage (V
IO Supply Voltage (V
Minimum rise time on V
V
Analog Inputs (V
SPI Inputs (S
V
reference)
V
V
(Differential Input)
Ground Difference |AGND-
DGND|
DR
REFT
REFB
CM
at power-up
Input Common Mode Range
(When using external
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
DR
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= -0.5dBFS
= 1.2V; V
DATA
IN
, S
A
N+, V
=V
REF
SEL
DR
D
)
)
, S
A
= internal; R
IN
, V
(Note
Typical
N-)
CLK
±0.75
±0.35
±0.66
±0.58
±1.23
69.3
69.0
69.9
69.6
68.5
68.5
69.3
69.2
11.1
11.1
11.2
11.2
D
-76
-78
-77
-79
A
,
)
= T
4)
(Note
MIN
REF
to T
Limits
±0.75
2,
±3.0
67.0
62.5
10.1
-65
12
±3
±3
= 10kohm ±1%; C
MAX
Note
475mV to 525mV
−65°C to +125°C
+1.14 to +1.26V
+1.14 to +1.89V
+1.14 to +2.50V
−40°C to +85°C
; All other limits
0.4V to 1.2V
3)
-0.10 to V
dBFS (min)
dBFS (min)
dBc (max)
Bits (min)
<50mV
Units
dBFS
dBFS
dBFS
dBFS
dBFS
dBFS
%FS
%FS
%FS
AGND
LSB
LSB
dBc
dBc
dBc
Bits
Bits
Bits
Bits
40µs
A
L