mc68hc908mr8 Freescale Semiconductor, Inc, mc68hc908mr8 Datasheet - Page 345

• Manufacturer Part Number: mc68hc908mr8
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

21.7 Memory Characteristics
MC68HC908MR8 — Rev 4.1
Freescale Semiconductor
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
Notes:
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
7. FLASH endurance is a function of the temperature at which erasure occurs. Typical endurance degrades when the tem-
8. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
9. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
10. Freescale performs reliability testing for data retention. These tests are based on samples tested at elevated tempera-
t
memory.
memory.
HVEN to logic 0.
t
least this many erase / program cycles.
perature while erasing is less than 25°C.
least this many erase / program cycles.
time specified.
tures. Due to the higher activation energy of the elevated test temperature, calculated life tests correspond to more than
100 years of operation/storage at 55°C
Read
rcv
HV
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(9)
(6)
nvs
(8)
+ t
nvh
MErase
Erase
+ t
pgs
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
Electrical Specifications
+ (t
PROG
t
Symbol
MErase
t
f
Erase
Read
t
V
t
t
PROG
rcv
HV
t
t
t
t
nvhl
× 64) ≤ t
RDR
—
nvh
pgs
—
—
—
nvs
(4)
(5)
(1)
(2)
(3)
HV
max.
Min
32k
100
10k
10k
1.3
10
30
—
10
1
1
4
5
5
1
100k
100k
100
Typ
—
—
—
—
—
—
—
—
—
—
—
—
(10)
(7)
(7)
Electrical Specifications
Memory Characteristics
8.4M
Max
40
—
—
—
—
—
—
—
—
—
—
—
—
4
Technical Data
Cycles
Cycles
Years
MHz
Unit
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
V
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