mc68hc908mr8 Freescale Semiconductor, Inc, mc68hc908mr8 Datasheet - Page 57

• Manufacturer Part Number: mc68hc908mr8
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

4.2.2 FLASH Control Register
MC68HC908MR8 — Rev 4.1
Freescale Semiconductor
The FLASH control register (FLCR) controls the FLASH program, erase,
and read operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
Reset:
dress:
Read:
Write:
Ad-
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can be set only if
either PGM = 1 or ERASE = 1 and the proper sequence for
program/margin read or erase is followed.
This read/write bit configures the memory for mass erase operation.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
set at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Mass erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
$FE08
Bit 7
0
0
Figure 4-1. FLASH Control Register (FLCR)
= Unimplemented
FLASH Memory
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
FLASH Memory
1
0
Technical Data
Introduction
PGM
Bit 0
0
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