peb3456e Infineon Technologies Corporation, peb3456e Datasheet - Page 162
peb3456e
Manufacturer Part Number
peb3456e
Description
Channelized T3 Termination, With Ds3 Framer, M13 Multiplexer, T1/e1 Framers And 256-channel Hdlc/ppp Controller
Manufacturer
Infineon Technologies Corporation
Datasheet
1.PEB3456E.pdf
(424 pages)
- Current page: 162 of 424
- Download datasheet (6Mb)
contains a total of n = 484 scan cells. The desired test mode is selected by serially
loading a 4-bit instruction code into the instruction register via TDI (LSB first).
EXTEST is used to examine the interconnection of the devices on the board. In this test
mode at first all input pins capture the current level on the corresponding external
interconnection line, whereas all output pins are held at constant values (‘0’ or ‘1’). Then
the contents of the boundary scan is shifted to TDO. At the same time the next scan
vector is loaded from TDI. Subsequently all output pins are updated according to the new
boundary scan contents and all input pins again capture the current external level
afterwards, and so on.
INTEST supports internal testing of the chip, i. e. the output pins capture the current level
on the corresponding internal line whereas all input pins are held on constant values (‘0’
or ‘1’). The resulting boundary scan vector is shifted to TDO. The next test vector is
serially loaded via TDI. Then all input pins are updated for the following test cycle.
SAMPLE/PRELOAD is a test mode which provides a snapshot of pin levels during
normal operation.
IDCODE: A 32-bit identification register is serially read out via TDO. It contains the
version number (4 bits), the device code (16 bits) and the manufacturer code (11 bits).
The LSB is fixed to ‘1’.
The ID code field is set to
Version
Part Number
Manufacturer
Note: Since in test logic reset state the code ‘0011’ is automatically loaded into the
BYPASS: A bit entering TDI is shifted to TDO after one TCK clock cycle.
CLAMP allows the state of signals driven from component pins to be determined from
the boundary-scan register while the bypass register is selected as the serial path
between TDI and TDO. Signals driven from the TE3-CHATT will not change while the
CLAMP instruction is selected.
HIGHZ places all of the system outputs in an inactive drive state.
Data Sheet
instruction register, the ID code can easily be read out in shift DR state.
: 2
: 0077
: 083
H
H
H
(including LSB, which is fixed to ’1’)
162
Interface Description
PEB 3456 E
05.2001
Related parts for peb3456e
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Antenna Switch Silicon Pin Diode
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Silicon Switching Diodes
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Single Igbt Driver Ic
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Igbt Modules
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
5 Volt Standard Regulator
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Active Biased Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Small Signal Mosfet 20v?800v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Sipmos Small-signal Transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v Small-signal-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Complementary Mosfets 60v
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
P-channel Mosfets Power-transistor
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer:
Infineon Technologies Corporation
Datasheet:
Part Number:
Description:
Power Mosfets
Manufacturer:
Infineon Technologies Corporation
Datasheet: