s71pl512nd0 Meet Spansion Inc., s71pl512nd0 Datasheet - Page 24
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s71pl512nd0
Manufacturer Part Number
s71pl512nd0
Description
Two S29pl256n Devices 32 M X 16-bit Cmos 3.0-volt Only Simultaneous Read/write, Page-mode Flash Memory
Manufacturer
Meet Spansion Inc.
Datasheet
1.S71PL512ND0.pdf
(90 pages)
- Current page: 24 of 90
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9.4
22
Program/Erase Operations
9.4.1 Single Word Programming
These devices are capable of single word or write buffer programming operations which are de-
scribed in the following sections. The write buffer programming is recommended over single word
programming as it has clear benefits from greater programming efficiency. See
page 17
Note the following details regarding the program/erase operations:
T When the Embedded Program algorithm is complete, the device then returns to the read
T The system can determine the status of the program operation by using DQ7 or DQ6. See
T A 0 cannot be programmed back to a 1. Attempting to do so causes the device to set DQ5 =
T Only erase operations can convert a 0 to a 1.
T A hardware reset immediately terminates the program operation and the program command
T Any commands written to the device during the Embedded Program Algorithm are ignored
T Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program oper-
T Programming is allowed in any sequence and across sector boundaries for single word pro-
In single word programming mode, four Flash command write cycles are used to program an in-
dividual Flash address. While this method is supported by all Spansion devices, in general it is not
recommended for devices that support Write Buffer Programming. See
bus cycles and
When the Embedded Program algorithm is complete, the device then returns to the read mode
and addresses are no longer latched. The system can determine the status of the program oper-
ation by using DQ7 or DQ6. See
Single word programming is supported for backward compatibility with existing Flash driver soft-
ware and use of write buffer programming is strongly recommended for general programming.
The effective word programming time using write buffer programming is approximately four times
faster than the single word programming time.
mode.
Write Operation Status
1 (halting any further operation and requiring a reset command). A succeeding read shows
that the data is still 0.
sequence should be reinitiated once the device has returned to the read mode, to ensure data
integrity.
except the Program Suspend command.
ation is in progress.
gramming operation.
for the correct device settings required before initiation of a write command sequence.
Figure 9.1
S29PL-N MirrorBit™ Flash Family
for the flowchart.
for information on these status bits.
Write Operation Status
P r e l i m i n a r y
for information on these status bits.
Table 15.1
S29PL-N_M0_A4 November 23, 2005
for the required
Table 9.1 on
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