s71pl512nd0 Meet Spansion Inc., s71pl512nd0 Datasheet - Page 29
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s71pl512nd0
Manufacturer Part Number
s71pl512nd0
Description
Two S29pl256n Devices 32 M X 16-bit Cmos 3.0-volt Only Simultaneous Read/write, Page-mode Flash Memory
Manufacturer
Meet Spansion Inc.
Datasheet
1.S71PL512ND0.pdf
(90 pages)
- Current page: 29 of 90
- Download datasheet (2Mb)
November 23, 2005 S29PL-N_M0_A4
be accepted. Any command other than Sector Erase or Erase Suspend during the time-out period
resets that bank to the read mode. The system can monitor DQ3 to determine if the sector erase
timer has timed out (see
the rising edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data and ad-
dresses are no longer latched. Note that while the Embedded Erase operation is in progress, the
system can read data from the non-erasing banks. The system can determine the status of the
erase operation by reading DQ7 or DQ6/DQ2 in the erasing bank. See
information on these status bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored. However, note that a hardware reset immediately terminates the erase
operation. If that occurs, the sector erase command sequence should be reinitiated once that
bank has returned to reading array data, to ensure data integrity.
Figure 9.3
Program Operations parameters and timing diagrams.
The following is a C source code example of using the sector erase function. Refer to the
Spansion Low Level Driver User’s Guide (available on
for general information on Spansion Flash memory software development guidelines.
/* Example: Sector Erase Command */
Software Functions and Sample Code
*((UINT16 *)base_addr + 0x555) = 0x00AA;
*((UINT16 *)base_addr + 0x2AA) = 0x0055;
*((UINT16 *)base_addr + 0x555) = 0x0080;
*((UINT16 *)base_addr + 0x555) = 0x00AA;
*((UINT16 *)base_addr + 0x2AA) = 0x0055;
*((UINT16 *)sector_address)
Unlimited additional sectors can be selected for erase; command(s) must be written within t
Cycle
1
2
3
4
5
6
illustrates the algorithm for the erase operation. See
Sector Erase Command
Setup Command
P r e l i m i n a r y
Description
Unlock
Unlock
Unlock
Unlock
S29PL-N MirrorBit™ Flash Family
DQ3: Sector Erase Timeout State
= 0x0030;
(LLD Function = lld_SectorEraseCmd)
Table 9.9 Sector Erase
/* write unlock cycle 1
/* write unlock cycle 2
/* write setup command
/* write additional unlock cycle 1 */
/* write additional unlock cycle 2 */
/* write sector erase command
Operation
Write
Write
Write
Write
Write
Write
www.amd.com
Indicator). The time-out begins from
Sector Address
AC Characteristics
Word Address
Base + 2AAh
Base + 2AAh
Base + 555h
Base + 555h
Base + 555h
Write Operation Status
and www.fujitsu.com)
*/
*/
*/
*/
for the Erase/
00AAh
0055h
00AAh
0055h
0030h
0080h
Data
SEA
for
.
27
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