th50vsf3583aasb TOSHIBA Semiconductor CORPORATION, th50vsf3583aasb Datasheet - Page 16

• Manufacturer Part Number: th50vsf3583aasb
• Description: Sram And Flash Memory Mixed Multi-chip Package
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC CHARACTERISTICS
AC TEST CONDITIONS
Read cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write cycle
t
t
t
t
t
t
t
t
t
t
Input Pulse Level
Input Pulse Rise and Fall Time (10%~90%)
Timing Measurement Reference Level (input)
Timing Measurement Reference Level (output)
Output Load
WC
WP
WR
RC
ACC
CO1
CO2
OE
BA
COE
OEE
BE
OD
ODO
BD
OH
CCR
CW
BW
AS
ODW
OEW
DS
DH
SYMBOL
SYMBOL
Read Cycle Time
Address Access Time
Chip Enable (
Chip Enable (CE2S) Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Data Byte Control High to Output Hi-Z
Output Data Hold Time
CE Recovery Time
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Data Byte Control to End of Write
Address Set-up Time
Write Recovery Time
Data Set-up Time
Data Hold Time
WE Low to Output Hi-Z
WE High to Output Active
PARAMETER
CE
1
S
(SRAM) (Ta = = = = -40°~85°C, V
) Access Time
PARAMETER
PARAMETER
CCs
= = = = 2.7 V~3.6 V)
TH50VSF3582/3583AASB
C
L
(100 pF) + 1 TTL gate
0.4 V, 2.4 V
V
V
MIN
MIN
VALUES
70








10
70
50
60
50

30
CCs
CCs
5
0
0
0
0
0
0
0
5 ns
× 0.5
× 0.5
2001-06-08 16/50
MAX
MAX
70
70
70
35
35
30
30
30
30















UNIT
UNIT
ns
ns