th50vsf3583aasb TOSHIBA Semiconductor CORPORATION, th50vsf3583aasb Datasheet - Page 28

• Manufacturer Part Number: th50vsf3583aasb
• Description: Sram And Flash Memory Mixed Multi-chip Package
• Manufacturer: TOSHIBA Semiconductor CORPORATION

ADDRESS A6~A0
2CH
2DH
2EH
2FH
4AH
4BH
4CH
4DH
4EH
4FH
30H
31H
32H
33H
34H
40H
41H
42H
43H
44H
45H
46H
47H
48H
49H
50H
DATA DQ15~DQ0
003EH
000XH
0002H
0007H
0000H
0020H
0000H
0000H
0000H
0001H
0050H
0052H
0049H
0031H
0031H
0000H
0002H
0001H
0001H
0004H
0001H
0000H
0000H
0085H
0095H
0001H
Number of Erase Block Region within device
Erase Block Region 1 Information
Erase Block Region 2 Information
Query Unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
Erase Suspend
Block Protect
Block Temporary Unprotect
Block Protect/Unprotect scheme
Simultaneous Operation
Burst Mode
Page Mode
V
V
Top/Bottom Boot Block Flag
Program Suspend
ACC
ACC
0~15 bit: y = Block Number
16~31 bit: z = Block Size
(z × 256 byte)
0: Required
1: Not Required
0: Not Supported
1: To Read Only
2: To Read & Write
0: Not Supported
X: Number of blocks in per group
0: Not Supported
1: Supported
0: Not Supported
1: Supported
0: Not Supported
0: Not Supported
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
2: TH50VSF3582AASB
3: TH50VSF3583AASB
0: Not Supported
1: Supported
Min voltage
Max voltage
TH50VSF3582/3583AASB
DESCRIPTION
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