lrs1302 Sharp Microelectronics of the Americas, lrs1302 Datasheet - Page 11

• Manufacturer Part Number: lrs1302
• Description: 8m Flash And 1m Sram
• Manufacturer: Sharp Microelectronics of the Americas

his
iection 1 provides
!, 3,4, and 5 describe the memory
unctiordity.
..l New Features
The LRS1302 SmartVoltage
)ackwards-compatibility
Cey enhancements
30th devices share a compatible,
oftware
clean upgrade
upgrading,
iifferences:
I.2 Product Overview
The
;martVoltage
>its. The 1 Mbyte
&Kbyte
o&able,
s shown in Figure 2.
SmartVoltage
*Enhanced Suspend Capabilities
Jn-System Block Locking
-Because of new feature support,
.VPpLK has been lowered
*To take advantage
INTRODUCTION
have
software optimization.
support
lock-bit
switch VPP off during read operations
sure that the VP, voltage transitions
allow VP, connection
datasheet
LRS1302
SHARP
and unlockable
command
different
blocks
2.7V-3.6V
configuration
it is important
Section 6 covers electrical specifications.
Flash memory
from the 28FOO8SA to LRS1302. When
Technology
contains
is
which
a flash memory
over the 28F008SA include:
device
of data is arranged
set. These similarities
a
block
of SmartVoltage
to 2.7V-3.6V.
in-system.
with
are individually
high-performance
operations.
codes.
Flash memory
LRS1302
organized as 1 Mbyte of 8
erase, byte write,
to note
from
SHARP’s
status register, and
overview.
The memory
This
organization
6SV to 1.5V to
the two devices
to GND.
the following
specifications.
Designs
should make
technology,
allows
28F008SA.
in sixteen
maintains
enable a
erasable,
Sections
&Mbit
LRS13023
map
and
and
that
for
;_.
SmartVoltage
VP, combinations,
performance
3.6V eliminates
In addition
dedicated
when VP, I VP,,.
NOTE’
block
‘1. FLASH Erase/Write(T*=O”C
Internal
automatically
and write operations.
A Command
interface
operation
written
internal
executes the algorithms
operations.
A block erase operation
64Kbyte
independent
independently
erases per device). Block erase suspend mode allows
system software to suspend
write data from any other block.
Writing
typically
enables the system to read data or execute code from
any other flash memory
Table 1. V,,
2,7V to 3.6V(‘l)
erase, byte
Vcc Voltage
’
memory
to the CUT initiates
Write
between the system processor
within
of the device. A valid command
VPP pm gives complete
Vcc
blocks
to flexible erase and program
by SmartVoltage
and power expectations.
technology
configures
of other
and VP, Voltage Combinations
erased 100,000 times (1.6 million
User Interface
the need for a separate 12V converter.
State Machine
data is performed
17 us. Byte write
as shown in Table 1, to meet system
and
write,
typically
array location.
blocks.
1
the device for optimized
provides
VW
and timings
erases one of the device’s
and lock-bit
Technology
device
block erase to read or
to 85°C)
(CUT) serves as the
within
(WSM)
detection
Each block
VPP Voltage
2.7V to 3.6V
a choice of Vcc and
in byte increments
automation.
data protection
suspend
V,
necessary for
automatically
configuration
1.8
voltages, the
and internal
at 2.7V to
sequence
Circuitry
Offered
can be
second
mode
block
read
An
9
I