lrs1302 Sharp Microelectronics of the Americas, lrs1302 Datasheet - Page 7

• Manufacturer Part Number: lrs1302
• Description: 8m Flash And 1m Sram
• Manufacturer: Sharp Microelectronics of the Americas

SHARP
5. Block Diagram
4.Truth table(* 1.3)
F-A,, to F-A,,
Notes:
F-a
HXXXLXLX
HXXHHXXX
HXXLHXXX
HXXXLLHX
HXXXLHHX
LLHHHXXX
LHHHHXXX
LHLHHXXX
* 5. Command writes involving block erase, write, or lock-bit configuration are reliably executed when
* 6. Reffer to Part 2 Section 3 Table 4 for valid DIN during a write operation.
$7. Do not
* 1. Do not make F-C? and S-C8 “LOW”
* 2. Reffcr to DC Character&tics.
* 3. X can be V,,, or V,,, for control pins and addresses, and V,,nx or VI,,,,, for F-V,,,,. See DC Characteristics
* 4. i@ at GND f0.2V
&to&,
for V,,,k and V,,.,, voltages.
F-V,,=V,,
V,,, <m<
F-m
s-m
F-m
F-GE
F-n
S-TE
S-FE
RP
use in
F-m
I
/
;
9
i
/
j
;
!
;
____________________----------.------------------------------------------
V,,,, produce spurious results and should not be attempted.
and F-V,@,.
The contents described in Part 1 take first priority over Part 2 and Part 3.
a timing that both F-mand
4
RP
>
>
>
>
>
>
>
3
ensures the lowest deep power-down
S-a
When F-V&V,,.,.,,
Block erase, byte write, or lock-bit conliguration with Vcc<3.0V or
1,048,576 X 8
S-m
131,072X8
LRS13023
F-V,
level at the samc,limc.
S-m
w
F-WE is “LOW”
bit Flash memory
Address
bit SR4M
memory contents can be read, but not altered.
F-V,,
v
Deep power down High-Z
current.
SRAM write
SRAM read
sR4M read
Flash write
Flash read
Flash read
Standby
Mode
level.
I
e-
e
I/O, toI/O,
output
output
High-Z
High-Z
High-Z
Input
Input
0
;
>
Current
Isa
Iss
I,,
I cc
EC
kc
Ice
I,,
*5,6,7
Note
*2,7
*4
*4
5