mt18vddt12872ag-335 Micron Semiconductor Products, mt18vddt12872ag-335 Datasheet - Page 17

• Manufacturer Part Number: mt18vddt12872ag-335
• Description: 256mb, 512mb, 1gb, 2gb X72, Ecc, Dr 184-pin Ddr Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 16: Capacitance
Note: 11; notes appear on pages 19–22
Table 17: DDR SDRAM Component Electrical Characteristics and
Notes: 1–5, 8, 12–15, 29, 49; notes appear on pages 19–22; 0°C
pdf: 09005aef80814e61, source: 09005aef807f8acb
DD18C32_64_128_256x72AG.fm - Rev. B 9/04 EN
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/
CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each
input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per
group, per access
Write command to first DQS latching
transition
DQS falling edge to CK rising -
setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/
CK#
Data-out low-impedance window from CK/
CK#
Address and control input hold time (fast
slew rate)
Address and control input setup time (fast
slew rate)
Address and control input hold time (slow
slew rate)
PARAMETER
Input/Output Capacitance: DQ, DQS, DM
Input Capacitance: Command and Address
Input Capacitance: S#, CKE
Input Capacitance: CK, CK#
Recommended AC Operating Conditions
CL = 2.5
CL = 2
t
SYMBOL
t
CK (2.5)
t
t
t
t
DQSCK
t
t
CK (2)
DQSH
DQSQ
DIPW
t
DQSL
DQSS
t
t
t
t
DSH
t
t
t
t
t
t
DSS
t
t
DH
AC
CH
HP
HZ
IH
IH
DS
CL
LZ
IS
256MB, 512MB, 1GB, 2GB (x72, ECC, DR)
F
F
S
-0.60
-0.70
MIN
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.75
0.75
0.80
-0.7
7.5
0.2
0.2
6
17
t
CH,
-335
T
t
A
CL
MAX
+0.60
+0.70
+0.7
0.55
0.55
0.45
1.25
13
13
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
7.5
7.5
0.5
0.5
0.2
0.2
1
DD
t
SYMBOL
CH,
-262
= V
C
C
C
C
t
IO
CL
I1
I1
I2
MAX
+0.75
+0.75
+0.75
0.55
0.55
1.25
DD
0.5
13
13
Q = +2.5V ±0.2V
7.5/10
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
7.5
0.5
0.5
0.2
0.2
-26A/-265
1
t
CH,
©2004 Micron Technology, Inc. All rights reserved.
MIN
36
18
12
t
8
CL
+0.75
+0.75
+0.75
MAX
0.55
0.55
1.25
0.5
13
13
MAX
10
54
27
18
UNITS
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
UNITS
NOTES
40, 46
40, 46
23, 27
23, 27
22, 23
16, 37
16, 37
pF
pF
pF
pF
26
26
27
30
12
12
12