m395t5160dz4-cd56/e66 Samsung Semiconductor, Inc., m395t5160dz4-cd56/e66 Datasheet - Page 4

• Manufacturer Part Number: m395t5160dz4-cd56/e66
• Description: Ddr2 Fully Buffered Dimm
• Manufacturer: Samsung Semiconductor, Inc.

Table 2 : Performance range
Table 3 : Address Configuration
1.0 FEATURES
Table 1 : Ordering Information
Note :
1. “Z” of Part number(11th digit) stands for Lead-free and RoHS compliant products.
2. The last digit stands for AMB.
FBDIMM
DDR2 DRAM Speed
CL-tRCD-tRP
128Mx8(1Gb) based Module
256Mx4(1Gb) based Module
M395T2863DZ4-CD56/E66
M395T5663DZ4-CD56/E66
M395T5160DZ4-CD56/E66
- 240pin fully buffered dual in-line memory module (FB-
- 3.2Gb/s, 4.0Gb/s link transfer rate
- 1.8V +/- 0.1V Power Supply for DRAM V
- 1.5V +0.075/-0.045V Power Supply for AMB V
- 3.3V +/- 0.3V Power Supply for V
- Buffer Interface with high-speed differential point-to-
- Channel error detection & reporting
- Channel fail over mode support
Part Number
DIMM)
point Link at 1.5 volt
Organization
Density Organization
1GB
2GB
4GB
DDSPD
128M x 72
256M x 72
512M x 72
Row Address
A0-A13
A0-A13
DD
E6(DDR2-667)
/V
DDQ
5-5-5
CC
667
Component Composition
128Mx8(K4T1G084QD)
128Mx8(K4T1G084QD)
256Mx4(K4T1G044QD)
4 of 31
Column Address
*18EA
*36EA
*9EA
A0-A9, A11
A0-A9
- Serial presence detect with EEPROM
- 8 Banks
- Posted CAS
- Programmable CAS Latency: 3, 4, 5
- Programmable Additive Latency: 0, 1, 2, 3, 4
- Automatic DDR2 DRAM bus and channel calibration
- MBIST and IBIST Test functions
- Hot add-on and Hot Remove Capability
- Transparent mode for DRAM test support
D5(DDR2-533)
4-4-4
533
Number
of Rank
1
2
2
Bank Address
BA0-BA2
BA0-BA2
IDT C1
AMB
Rev. 1.01 March 2008
DDR2 SDRAM
Full Module 30.35mm
Spreader
Type of
Heat
Auto Precharge
Mbps
Unit
CK
A10
A10
Height