k4j55323qi Samsung Semiconductor, Inc., k4j55323qi Datasheet - Page 53

• Manufacturer Part Number: k4j55323qi
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QI
AC CHARACTERISTICS II-I
AC CHARACTERISTICS II-II
Row active time
Row cycle time
Refresh row cycle time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge (PRE or Auto-PRE) tWR
Last data in to Read command
Mode register set cycle time
Auto precharge write recovery time + Precharge
Exit self refresh to Read command
Exit self refresh to Non-Read command
Power-down exit time
Refresh interval time
Parameter
Row active time
Row cycle time
Refresh row cycle time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge (PRE or Auto-PRE) t
Last data in to Read command
Mode register set cycle time
Auto precharge write recovery time + Precharge
Exit self refresh to Read command
Exit self refresh to Non-Read command
Power-down exit time
Refresh interval time
Parameter
tRAS
tRC
tRFC
tRCDR
tRCDW
tRP
tRRD
tCDLR
tMRD
tDAL
tXSR
tXSNR
tPDEX
tREF
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
RAS
RC
RFC
RCDR
RCDW
RP
RRD
WR
CDLR
MRD
DAL
XSR
XSNR
PDEX
REF
53 / 54
7tCK+tIS
20000
20000
8tCK
+tIS
Min
100
Min
100
41
14
12
10
13
29
52
10
25
25
35
45
12
10
11
21
7
9
-
8
8
6
7
-
-BJ1A
-BC12
100K
100K
Max
Max
7.8
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
256M GDDR3 SDRAM
7tCK+tIS
20000
20000
6tCK
Min
+tIS
100
Min
100
25
35
45
12
10
21
11
22
31
39
10
10
19
8
8
6
7
6
9
8
5
6
-
-
-BC14
-BJ11
Rev. 1.3 May 2007
100K
100K
Max
Max
7.8
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
us
us