CHA5296-99F/00 UMS [United Monolithic Semiconductors], CHA5296-99F/00 Datasheet

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CHA5296-99F/00

Manufacturer Part Number
CHA5296-99F/00
Description
27-30GHz High Power Amplifier
Manufacturer
UMS [United Monolithic Semiconductors]
Datasheet
Description
The CHA5296 is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process on 50µm substrate thickness, 0.25µm
gate length, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances : 27-30GHz
■ 29dBm output power @ 1dB comp. gain
■ 15 dB
■ DC power consumption, 850mA @ 6V
■ Chip size :
Main Characteristics
Tamb. = 25°C
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Symbol
Ref. : DSCHA52962147 - 27-May-02
P1dB
Fop
Id
G
1dB gain
3.80 x 2.52 x 0.05 mm
communication
Output power at 1dB gain compression
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
27-30GHz High Power Amplifier
Operating frequency range
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Small signal gain
Parameter
Bias current
systems. The
1/6
-10
-15
-20
20
15
10
-5
5
0
20
Typical on jig Measurements
Specifications subject to change without notice
22
Min
27
14
28
24
Frequency (GHz)
S11
26
Typ
850
15
29
28
S22
1000
Max
30
CHA5296
30
32
Unit
dBm
GHz
mA
dB
34
36

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CHA5296-99F/00 Summary of contents

Page 1

... High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier designed for a wide range of applications, from military to commercial communication backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process on 50µ ...

Page 2

... Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52962147 - 27-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 27-30GHz High Power Amplifier Parameter ...

Page 3

... PAE Gain, PAE & DC drain current vs Output power @ different frequencies Ref. : DSCHA52962147 - 27-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 S11 Frequency (GHz) 32GHz 30GHz 30GHz Id 30GHz ...

Page 4

... C/I & IP3 versus total fund. output power @ 28.5GHz ( F=10MHz) Ref. : DSCHA52962147 - 27-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 27-30GHz High Power Amplifier ( Input Power(dBm) c/i3 c/i IP3 16 18 ...

Page 5

... Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire prefered. ( Chip thickness : 50µm. All dimensions are in micrometers ) Ref. : DSCHA52962147 - 27-May-02 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Bonding pad positions. ...

Page 6

... Ordering Information Chip form : CHA5296-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S ...

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