CHA5296-99F/00 UMS [United Monolithic Semiconductors], CHA5296-99F/00 Datasheet - Page 2

• Manufacturer Part Number: CHA5296-99F/00
• Description: 27-30GHz High Power Amplifier
• Manufacturer: UMS [United Monolithic Semiconductors]

CHA5296
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #900mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
(2) Value representative for CW on jig measurement.
VSWRout Output VSWR (2)
(1) These values are representative for pulsed on-wafer measurements that are made without
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Symbol
Symbol
VSWRin
bonding wires at the RF ports.
Ref. : DSCHA52962147 - 27-May-02
P1dB
PAE
Tstg
Fop
P03
Vgd
IP3
Pin
Vd
Vg
Ta
Tj
Id
G
Is
Id
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression (1)
3
Power added efficiency at Psat
Input VSWR (2)
Junction temperature for 80°C backside
Bias current @ small signal
rd
Drain bias voltage
Drain bias current
Gate bias voltage
Negative gate drain voltage ( = Vg - Vd)
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Tel.: [phone] - Fax : [phone]
order intercept point (2)
Parameter
Parameter
2/6
27-30GHz High Power Amplifier
Specifications subject to change without notice
Min
27
14
28
29
12
-2.5 to +0.4
-55 to +125
-40 to +80
Values
1450
6.25
+18
-8
Typ
170
850
15
50
29
30
41
16
1
Max
2.5:1
1000
5:1
30
Unit
dBm
mA
°C
°C
Unit
dBm
dBm
dBm
V
V
V
GHz
mA
dB
dB
dB
°C
%