CY7C1214F-100AC CYPRESS [Cypress Semiconductor], CY7C1214F-100AC Datasheet

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CY7C1214F-100AC

Manufacturer Part Number
CY7C1214F-100AC
Description
1-Mb (32K x 32) Flow-Through Sync SRAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05434 Rev. *A
Features
Functional Description
The CY7C1214F is a 32,768 x 32 synchronous cache RAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com
• 32K X 32 common I/O
• 3.3V –5% and +10% core power supply (V
• 3.3V I/O supply (V
• Fast clock-to-output times
• Provide high-performance 2-1-1-1 access rate
• User-selectable burst counter supporting Intel
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
• Supports 3.3V I/O level
• Offered in JEDEC-standard 100-pin TQFP package
• “ZZ” Sleep Mode option
A0, A1, A
Logic Block Diagram
— 7.5 ns (117-MHz version)
— 8.5 ns (100-MHz version)
Pentium
MODE
ADSC
ADSP
BW
BWE
ADV
BW
BW
BW
CLK
GW
CE1
CE2
CE3
ZZ
OE
A
D
B
C
interleaved or linear burst sequences
CONTROL
SLEEP
DDQ
)
[1]
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
BYTE
BYTE
BYTE
BYTE
BYTE
DQ
DQ
DQ
DQ
REGISTER
ENABLE
C
B
D
A
CLR
ADDRESS
REGISTER
AND LOGIC
COUNTER
1-Mb (32K x 32) Flow-Through Sync SRAM
BURST
Q1
Q0
DD
3901 North First Street
A
)
[1:0]
7.5 ns (117-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
( CE
Control inputs ( ADSC , ADSP , and ADV ), Write Enables
( BW
i nputs include the Output Enable ( OE ) and the ZZ pin .
The CY7C1214F allows either interleaved or linear burst
sequences, selected by the MODE input pin. A HIGH selects
an interleaved burst sequence, while a LOW selects a linear
burst sequence. Burst accesses can be initiated with the
Processor Address Strobe (ADSP) or the cache Controller
Address Strobe (ADSC) inputs. Address advancement is
controlled by the Address Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor ( ADSP ) or
Address Strobe Controller ( ADSC ) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin ( ADV ).
The CY7C1214F operates from a +3.3V core power supply
while all outputs may operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
1
[A:D]
), depth-expansion Chip Enables (CE
BYTE
BYTE
DQ
BYTE
DQ
BYTE
DQ
DQ
B
D
A
C
, and BWE ), and Global Write ( GW ). Asynchronous
San Jose
MEMORY
ARRAY
,
CA 95134
SENSE
AMPS
Revised March 24, 2004
OUTPUT
BUFFERS
CY7C1214F
2
and CE
REGISTERS
408-943-2600
INPUT
3
), Burst
DQs

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CY7C1214F-100AC Summary of contents

Page 1

... Offered in JEDEC-standard 100-pin TQFP package • “ZZ” Sleep Mode option Functional Description [1] The CY7C1214F is a 32,768 x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is Logic Block Diagram A0, A1, A ...

Page 2

... SSQ V 27 DDQ Document #: 38-05434 Rev. *A 117 MHz 100 MHz 7.5 8.0 220 205 35 35 100-Pin TQFP CY7C1214F CY7C1214F Unit DDQ 76 V SSQ BYTE ...

Page 3

... The direction of the pins is controlled When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed in a three-state condition. Power supply inputs to the core of the device. Ground for the core of the device. CY7C1214F , CE , and CE are 1 ...

Page 4

... Maximum access delay from the clock rise ( 7.5 ns (117-MHz device). CDV The CY7C1214F supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that utilize a linear burst sequence ...

Page 5

... and BWE = L or GW= L. WRITE = H when all Byte Write enable signals CY7C1214F Second Third Address Address Min. Max CYC ...

Page 6

... BWE CY7C1214F ADV WRITE OE CLK L L-H Three-State L L-H Three-State L L-H Three-State L L L-H Q ...

Page 7

... IL (min.) within 200 ms. During this time V < CY7C1214F Ambient ] Temperature V DD ° ° +70 C 3.3V −5%/+10% CY7C1214F Min. Max. 3.135 3.135 2.4 2 –0.3 −5 –30 –5 –5 –300 8.0-ns cycle, 117 MHz 10-ns cycle, 100 MHz 8.0-ns cycle, 117 MHz 10-ns cycle, 100 MHz All speeds 8 ...

Page 8

... V POWER is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ CY7C1214F TQFP Package 41.83 9.99 Max ALL INPUT PULSES V DDQ 90% ...

Page 9

... GW , BWE , BW t Hold after CLK Rise WEH [A:D] t ADV Hold after CLK Rise ADVH t Data Input Hold after CLK Rise DH t Chip Enable Hold after CLK Rise CEH Document #: 38-05434 Rev. *A [10, 11] Description CY7C1214F 117 MHz 100 MHz Min. Max. Min. Max. Unit 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2 ...

Page 10

... ADVS ADVH t CDV t OELZ t OEHZ t DOH Q(A2 DON’T CARE is HIGH and CE is LOW. When CE is HIGH CY7C1214F ADV suspends burst. Q( Q(A2) Q( Burst wraps around to its initial state BURST READ UNDEFINED is HIGH LOW HIGH Deselect Cycle ...

Page 11

... Full width write can be initiated by either GW LOW HIGH, BWE LOW and BW Document #: 38-05434 Rev WES WEH DH D(A2 BURST WRITE DON’T CARE UNDEFINED [A:D] CY7C1214F ADSC extends burst. t ADS t ADH A3 t WES t WEH t ADVS t ADVH ADV suspends burst D(A3) D( Extended BURST WRITE LOW ...

Page 12

... The data bus (Q) remains in High-Z following a Write cycle unless an ADSP , ADSC , or ADV cycle is performed. 19 HIGH Document #: 38-05434 Rev WEH WES OELZ D(A3) t OEHZ t CDV Q(A4) Single WRITE DON’T CARE CY7C1214F A5 D(A5) Q(A4+1) Q(A4+2) Q(A4+3) Back-to-Back BURST READ UNDEFINED Page D(A6) WRITEs ...

Page 13

... Speed (MHz) Ordering Code 100 CY7C1214F-100AC Shaded area contain advance information. Please contact your local Cypress sales representative for availability of this part. Please contact your local Cypress sales representative for availability of 117-MHz speed grade option. Notes: 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. ...

Page 14

... Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. DIMENSIONS ARE IN MILLIMETERS 0.30±0.08 0.65 TYP STAND-OFF 0.05 MIN. SEATING PLANE 0.15 MAX. A CY7C1214F 1.40±0.05 12°±1° A SEE DETAIL (8X) 0.20 MAX. 1.60 MAX. 51-85050-*A Page ...

Page 15

... Document History Page Document Title: CY7C1214F 1-Mb (32K x 32) Flow-Through Sync SRAM Document Number: 38-05434 REV. ECN NO. Issue Date ** 200780 See ECN *A 213321 See ECN Document #: 38-05434 Rev. *A Orig. of Change NJY New Data Sheet VBL Updated Ordering info: shaded part number, added explanation ...

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