CY7C1214F-100AC CYPRESS [Cypress Semiconductor], CY7C1214F-100AC Datasheet - Page 7
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CY7C1214F-100AC
Manufacturer Part Number
CY7C1214F-100AC
Description
1-Mb (32K x 32) Flow-Through Sync SRAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
1.CY7C1214F-100AC.pdf
(15 pages)
Document #: 38-05434 Rev. *A
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DC Voltage Applied to Outputs
in Three-State ..................................... –0.5V to V
DC Input Voltage....................................–0.5V to V
Electrical Characteristics
Parameter
V
V
V
V
V
V
I
I
I
I
I
I
I
I
Notes:
X
OZ
OS
DD
SB1
SB2
SB3
SB4
7. Overshoot: V
8. T
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0v to V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
(except ZZ and MODE)
Input Current of MODE
Input Current of ZZ
Output Leakage Current
Output Short Circuit Current
V
Automatic CE Power-Down
Current—TTL Inputs
Automatic CE Power-Down
Current—CMOS Inputs
Automatic CE Power-Down
Current—CMOS Inputs
Automatic CE Power-Down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply Current
DD
DDQ
Description
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
[7]
Over the Operating Range
DD
(min.) within 200 ms. During this time V
V
V
V
V
GND ≤ V
Input = V
Input = V
Input = V
Input = V
GND ≤ V
V
f = f
Max. V
V
inputs switching
Max. V
V
f = 0, inputs static
Max. V
V
f = f
Max. V
V
f = 0, inputs static
V
IN
IN
IN
IN
CYC
DDQ
DDQ
DDQ
DDQ
DD
DD
DDQ
DD
MAX
≥ V
≥ V
≥ V
≥ V
MAX
= Max., V
= Max., I
/2), undershoot: V
= 3.3V, V
= 3.3V, V
= 3.3V
= 3.3V
+ 0.5V
+ 0.5V
DDQ
IH
DD
DD
= 1/t
DD
DD
DD
DD
, inputs switching
I
or V
I
SS
DD
SS
DD
, Device Deselected,
, Device Deselected,
, Device Deselected,
, Device Deselected,
– 0.3V or V
≤ V
– 0.3V or V
≤ V
– 0.3V or V
CYC
OUT
IN
DD
OUT
[7, 8]
DDQ
DD
DD
≤ V
, Output Disabled
= 0 mA,
= GND
= Min., I
= Min., I
IL
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
IL
Commercial
Test Conditions
, f = f
(AC) > –2V (Pulse width less than t
IN
IN
IN
≤ 0.3V,
Range
MAX,
≤ 0.3V,
≤ 0.3V,
OH
OL
IH
< V
= 8.0 mA
= –4.0 mA
DD
and V
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
DDQ
Temperature
0
°
Ambient
C to +70
< V
DD
.
CYC
°
C
/2).
]
−5%/+10%
3.135
3.135
Min.
–0.3
–30
2.4
2.0
−5
–5
–5
3.3V
V
CY7C1214F
CY7C1214F
DD
V
DD
Max.
–300
220
205
Page 7 of 15
3.6
3.6
0.4
0.8
30
85
80
35
70
65
18
+ 0.3V
5
5
5
3.3V –5%
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V