IS42S16100-10TI ISSI [Integrated Silicon Solution, Inc], IS42S16100-10TI Datasheet - Page 28

• Manufacturer Part Number: IS42S16100-10TI
• Description: 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
• Manufacturer: ISSI [Integrated Silicon Solution, Inc]

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IS42S16100
CAS latency = 3, burstlength = 4
Interval Between Write and Read Commands
A new read command can be executed while a write cycle
is in progress, i.e., before that cycle completes. Data
corresponding to the new read command is output after the
CAS latency has elapsed from the point the new read
command was executed. The I/On pins must be placed in
the HIGH impedance state at least one cycle before data
is output during this operation.
CAS latency = 2, burstlength = 4
COMMAND
COMMAND
CLK
CLK
I/O
I/O
WRITE (CA=A, BANK 0)
WRITE (CA=A, BANK 0)
D
D
WRITE A0
WRITE A0
IN
IN
A0
A0
READ B0
READ B0
t
t
CCD
CCD
READ (CA=B, BANK 0)
READ (CA=B, BANK 0)
HI-Z
Integrated Silicon Solution, Inc. — www.issi.com —
D
OUT
HI-Z
B0
The interval (t
clock cycle.
The selected bank must be set to the active state before
executing this command.
D
D
OUT
OUT
B0
B1
D
D
OUT
OUT
CCD
B2
B1
) between command must be at least one
D
D
OUT
OUT
B3
B2
D
OUT
B3
ISSI
1-800-379-4774
11/01/01
Rev. C
®