IS42S16100-10TI ISSI [Integrated Silicon Solution, Inc], IS42S16100-10TI Datasheet - Page 4

• Manufacturer Part Number: IS42S16100-10TI
• Description: 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
• Manufacturer: ISSI [Integrated Silicon Solution, Inc]

4
IS42S16100
DC RECOMMENDED OPERATING CONDITIONS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
2. All voltages are referenced to GND.
3. V
ABSOLUTE MAXIMUM RATINGS
V
Symbol
C
C
CI/O
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Symbol
V
V
V
V
P
I
T
T
CS
IH
Symbol
OPR
STG
CC
IN
IN
CC MAX
CCQ MAX
IN
OUT
D MAX
1
2
(max) = V
V
V
, V
IH
IL
CC
Q
CCQ
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
+ 2.0V with a pulse width
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
(4)
(3)
(1)
3 ns.
Min.
(1,2)
-0.3
3.0
2.0
Integrated Silicon Solution, Inc. — www.issi.com —
(At T
A
Typ.
= 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
3.3
—
—
(2)
(
At T
V
DD
Max.
+0.8
A
3.6
+ 0.3
= 0 to +70°C)
Com
Ind.
Unit
V
V
V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–55 to +150 °C
-40 to +85
0 to +70
Rating
50
Typ.
1
—
—
—
Unit
W
mA
°C
°C
Max.
4
4
5
ISSI
1-800-379-4774
Unit
pF
pF
pF
11/01/01
Rev. C
®