IS42S16100-10TI ISSI [Integrated Silicon Solution, Inc], IS42S16100-10TI Datasheet - Page 30

• Manufacturer Part Number: IS42S16100-10TI
• Description: 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
• Manufacturer: ISSI [Integrated Silicon Solution, Inc]

30
IS42S16100
Precharge
The precharge command sets the bank selected by pin A11
to the precharged state. This command can be executed at
a time t
the same bank. The selected bank goes to the idle state at
a time t
and an active command can be executed again for that
bank.
If pin A10 is low when this command is executed, the bank
selected by pin A11 will be precharged, and if pin A10 is
HIGH, both banks will be precharged at the same time. This
input to pin A11 is ignored in the latter case.
CAS latency = 3, burstlength = 4
CAS latency = 2, burstlength = 4
RP
RAS
following the execution of the precharge command,
COMMAND
COMMAND
following the execution of an active command to
CLK
CLK
I/O
I/O
READ (CA=A, BANK 0)
READ (CA=A, BANK 0)
READ A0
READ A0
PRECHARGE (BANK 0)
D
Integrated Silicon Solution, Inc. — www.issi.com —
OUT
A0 D
D
PRE 0
PRE 0
OUT
OUT
Read Cycle Interruption
Using the Precharge Command
A read cycle can be interrupted by the execution of the
precharge command before that cycle completes. The
delay time (t
command to the completion of the burst output is the
clock cycle of CAS latency.
A0 D
A1 D
PRECHARGE (BANK 0)
CAS
CAS
CAS
CAS
CAS Latency
t
RQL
OUT
OUT
t
RQL
A1 D
A2
t
RQL
RQL
) from the execution of the precharge
OUT
HI-Z
A2
HI-Z
3
3
ISSI
1-800-379-4774
2
2
11/01/01
Rev. C
®