CY14E256LA-ZS25XI CYPRESS [Cypress Semiconductor], CY14E256LA-ZS25XI Datasheet - Page 12

• Manufacturer Part Number: CY14E256LA-ZS25XI
• Description: 256 Kbit (32K x 8) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

AutoStore/Power Up RECALL
Switching Waveforms
Document Number: 001-54952 Rev. *B
Notes
t
t
t
V
t
V
t
t
HRECALL
STORE
DELAY
VCCRISE
LZHSB
HHHD
17. t
18. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
19. On a Hardware Store and AutoStore initiation, SRAM write operation continues to be enabled for time t
20. Read and Write cycles are ignored during STORE, RECALL, and while V
21. HSB pin is driven high to V
SWITCH
HDIS
HRECALL
[10]
[10]
[19]
[10]
[18]
Parameters
[10]
[17]
Read & Write
starts from the time V
Inhibited
(
RWI
POWER-
AutoStore
RECALL
HSB OUT
V
UP
SWITCH
V
)
HDIS
V
CC
CC
only by internal 100 k
POWER-UP
CC
RECALL
Power Up RECALL Duration
STORE Cycle Duration
Time Allowed to Complete SRAM Write Cycle
Low Voltage Trigger Level
VCC Rise Time
HSB Output Disable Voltage
HSB To Output Active Time
HSB High Active Time
rises above V
V
VCCRISE
SWITCH.
Figure 8. AutoStore or Power Up RECALL
Read & Write
t
t
t
HHHD
LZHSB
HRECALL
Ω
resistor, HSB driver is disabled.
Note
Description
AutoStore
BROWN
t
DELAY
18
OUT
CC
is below V
t
STORE
POWER-UP
RECALL
SWITCH.
t
HRECALL
t
t
HHHD
LZHSB
DELAY
Read & Write
[20]
.
t
DELAY
Min
150
Note
CY14E256LA
AutoStore
POWER
DOWN
18
t
Note
STORE
CY14E256LA
Max
500
4.4
1.9
20
25
8
5
21
Page 12
Unit
ms
ms
ns
µs
µs
ns
V
V
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