HYB18T512161B2F-20/25 QIMONDA [Qimonda AG], HYB18T512161B2F-20/25 Datasheet - Page 21

• Manufacturer Part Number: HYB18T512161B2F-20/25
• Description: 512-Mbit x16 DDR2 SDRAM
• Manufacturer: QIMONDA [Qimonda AG]

5.4
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (
3) The driver characteristics evaluation conditions are Nominal 25 °C (
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (
1) The driver characteristics evaluation conditions are Nominal Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Low and Nominal High 25 °C (
3) The driver characteristics evaluation conditions are Nominal 25 °C (
4) The driver characteristics evaluation conditions are Nominal Maximum 0 °C (
Rev. 1.1, 2007-06
05152007-ZYAH-ACMZ
Voltage (V)
0.2
0.3
0.4
Voltage (V)
0.2
0.3
0.4
Calibrated Pull-up Driver Current [mA]
Nominal Minimum
(21 Ohms)
–9.5
–14.3
–18.3
Calibrated Pull-down Driver Current [mA]
Nominal Minimum
(21 Ohms)
9.5
14.3
18.7
Output Buffer Characteristics
1)
1)
Nominal
Low
–10.7
–16.0
–21.0
2)
Nominal
Low
Ohms)
10.7
16.0
21.0
(18.75 Ohms)
2)
(18.75
Full Strength Calibrated Pull-down Driver Characteristics
Full Strength Calibrated Pull-up Driver Characteristics
21
Nominal(18
ohms)
–11.4
–16.5
–21.2
T
T
CASE
CASE
Nominal
ohms)
11.5
16.6
21.6
),
),
3)
V
V
DDQ
T
DDQ
T
T
T
CASE
CASE
CASE
CASE
3)
= 1.8 V, typical process
= 1.8 V, typical process
(18
),
),
).
).
V
V
512-Mbit Double-Data-Rate-Two SDRAM
V
V
DDQ
DDQ
DDQ
DDQ
= 1.9 V, any process
= 1.9 V, any process
= 1.7 V, any process
= 1.7 V, any process
Nominal
High
Ohms)
–11.8
–17.4
–23.0
T
T
CASE
Nominal
High
Ohms)
11.8
17.4
23.0
CASE
2)
),
),
(17.25
2)
V
V
(17.25
DDQ
DDQ
HYB18T512161B2F–20/25
= 1.8 V, any process
= 1.8V, any process
Internet Data Sheet
Nominal
Maximum
Ohms)
–13.3
–20.0
–27.0
Nominal
Maximum
Ohms)
13.3
20.0
27.0
TABLE 23
TABLE 24
4)
4)
(15
(15