MC908QL4 FREESCALE [Freescale Semiconductor, Inc], MC908QL4 Datasheet - Page 35

• Manufacturer Part Number: MC908QL4
• Description: M68HC08 Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2.6.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Freescale Semiconductor
This read/write bit enables high voltage from the charge pump to the memory for either program or
erase operation. It can only be set if either PGM =1 or ERASE =1 and the proper sequence for
program or erase is followed.
This read/write bit configures the memory for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Mass erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Reset:
Read:
Write:
Bit 7
0
0
= Unimplemented
Figure 2-3. FLASH Control Register (FLCR)
6
0
0
MC68HC908QL4 Data Sheet, Rev. 7
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
FLASH Memory (FLASH)
PGM
Bit 0
0
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