K9F1G08U0A SAMSUNG [Samsung semiconductor], K9F1G08U0A Datasheet - Page 18

• Manufacturer Part Number: K9F1G08U0A
• Description: 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08R0A
K9F1G08U0A
Input Data Latch Cycle
Serial Access Cycle after Read
I/Ox
ALE
CLE
CE
WE
CE
RE
R/B
I/Ox
K9K2G08U1A
t
RR
NOTES : Transition is measured ±200mV from steady state voltage with load.
t
CEA
t
ALS
t
REA
t
WP
t
RP
t
This parameter is sampled and not 100% tested.
DS
DIN 0
t
WC
t
RC
Dout
(CLE=L, WE=H, ALE=L)
t
DH
t
NOTES : DIN final means 2112
WH
t
REH
t
WP
t
REA
t
DS
DIN 1
18
t
DH
Dout
t
RHZ*
t
DIN final*
WP
t
DS
t
DH
t
CH
t
CLH
t
REA
FLASH MEMORY
Dout
t
t
t
t
CHZ*
OH
RHZ*
OH