K9F1G08U0A SAMSUNG [Samsung semiconductor], K9F1G08U0A Datasheet - Page 9

• Manufacturer Part Number: K9F1G08U0A
• Description: 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08R0A
DC AND OPERATING CHARACTERISTICS
NOTE : V
K9F1G08U0A
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1G08X0A-XCB0
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under
Bias
Storage Temperature
Short Circuit Current
Operating
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Current
Maximum DC voltage on input/output pins is V
IL
Parameter
Parameter
can undershoot to -0.4V and V
Page Read with
Serial Access
Program
Erase
Parameter
K9K2G08U1A
K9F1G08X0A-XCB0
K9F1G08X0A-XIB0
K9F1G08X0A-XCB0
K9F1G08X0A-XIB0
SS
Symbol
Symbol
I
OL
I
I
I
V
V
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
CC
SS
IH*
OH
LI
IL*
OL
IH
1
2
3
1
2
can overshoot to V
tRC=30ns(50ns with 1.8V device),
CE=V
I
CE=V
CE=V
WP=0V/V
V
V
K9F1G08R0A :I
K9F1G08U0A :I
K9F1G08R0A :I
K9F1G08U0A :I
K9F1G08R0A :V
K9F1G08U0A :V
OUT
CC,
IN
OUT
=0 to Vcc(max)
+0.3V which, during transitions, may overshoot to V
=0mA
=0 to Vcc(max)
IL
IH
CC
1.65
Min
:
, WP=0V/V
0
T
-0.2,
Test Conditions
A
CC
=0 to 70°C, K9F1G08X0A-XIB0
K9F1G08R0A(1.8V)
Symbol
V
CC
T
T
IN/OUT
V
Ios
BIAS
STG
OH
OH
OL
OL
CC
OL
OL
-
-
-
-
+0.4V for durations of 20 ns or less.
=100uA
=2.1mA
Typ.
=-100µA
=-400µA
CC
1.8
=0.1V
=0.4V
(Recommended operating conditions otherwise noted.)
0
9
1.8V DEVICE
-0.6 to + 2.45
-0.2 to + 2.45
Max
1.95
0
0.8xV
Min
-0.3
Vcc
-0.1
3
-
-
-
-
-
-
-
-
K9F1G08R0A
CC
:
T
Min
2.7
A
0
1.8V
=-40 to 85°C)
Typ
10
10
10
10
-10 to +125
-40 to +125
-65 to +150
4
K9F1G08U0A(3.3V)
-
-
-
-
-
-
-
Rating
CC
+2.0V for periods <20ns.
5
0.2xVcc
Max
+0.3
V
±10
±10
0.1
20
20
20
50
1
Typ.
CC
-
-
3.3
FLASH MEMORY
0
3.3V DEVICE
-0.6 to + 4.6
-0.6 to + 4.6
0.8xVcc
Min
-0.3
2.4
8
-
-
-
-
-
-
-
-
K9F1G08U0A
Max
3.6
0
3.3V
Typ
15
15
15
10
10
-
-
-
-
-
-
-
0.2xVcc
+0.3
Max
±10
±10
V
0.4
30
30
30
50
1
CC
-
-
Unit
V
V
Unit
mA
°C
°C
V
Unit
mA
mA
µA
V