K9F1G08U0A SAMSUNG [Samsung semiconductor], K9F1G08U0A Datasheet - Page 36

• Manufacturer Part Number: K9F1G08U0A
• Description: 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08R0A
K9F1G08U0A
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 2V(3.3V device). WP pin provides hardware protection and is
recommended to be kept at V
gets ready for any command sequences as shown in Figure 17. The two step command sequence for program/erase provides addi-
tional software protection.
Figure 17. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
K9K2G08U1A
IL
during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit
10µs
High
36
FLASH MEMORY
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V