K9F1G08U0A SAMSUNG [Samsung semiconductor], K9F1G08U0A Datasheet - Page 22

• Manufacturer Part Number: K9F1G08U0A
• Description: 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08R0A
Page Program Operation
K9F1G08U0A
CLE
CE
WE
ALE
RE
R/B
I/Ox
Input Command
SerialData
80h
t
WC
K9K2G08U1A
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Co.l Add1
Column Address
Col. Add2
Row Add1
Row Address
t
WC
Row Add2
m = 2112byte
t
ADL
1 up to m Byte
22
Din
Serial Input
N
t
WC
Din
M
Program
Command
10h
t
WB
FLASH MEMORY
t
PROG
Read Status
Command
I/O
I/O
0
0
=0 Successful Program
=1 Error in Program
70h
I/O
0