K9F1G08U0A SAMSUNG [Samsung semiconductor], K9F1G08U0A Datasheet - Page 35

• Manufacturer Part Number: K9F1G08U0A
• Description: 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1G08R0A
K9F1G08U0A
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
tr,tf [s]
100n
Rp value guidance
V
300n
200n
CC
GND
where I
Rp(max) is determined by maximum permissible limit of tr
Ibusy
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
@ Vcc = 1.8V, Ta = 25°C , C
L
is the sum of the input currents of all devices tied to the R/B pin.
1.70
1K
30
1.70
Device
open drain output
tf
K9K2G08U1A
tr
60
0.85
1.70
2K
R/B
Rp(ohm)
Rp
V
V
CC
CC
90
(Max.) - V
(Max.) - V
3K
1.70
Figure 17. Rp vs tr ,tf & Rp vs ibusy
ibusy
0.57
I
I
OL
OL
L
C
= 30pF
+ ΣI
+ ΣI
L
1.70
OL
OL
120
0.43
L
L
4K
(Max.)
(Max.)
Ready Vcc
Ibusy [A]
=
=
2m
3m
1m
35
tr,tf [s]
100n
300n
200n
tf
3mA + ΣI
8mA + ΣI
1.85V
3.2V
1.8V device - V
3.3V device - V
VOL
L
L
2.4
1K
50
1.8
@ Vcc = 3.3V, Ta = 25°C , C
Ibusy
Busy
OL
OL
tf
tr
: 0.1V, V
: 0.4V, V
100
1.2
2K
1.8
FLASH MEMORY
OH
OH
Rp(ohm)
: V
: 2.4V
CC
150
0.8
3K
1.8
-0.1V
tr
L
VOH
= 50pF
0.6
200
1.8
4K
Ibusy [A]
2m
3m
1m