K9K1208D0C Samsung semiconductor, K9K1208D0C Datasheet - Page 10

• Manufacturer Part Number: K9K1208D0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Error in write or read operation
ECC
Over its life time, the additional invalid blocks may occur. Through the tight process control and intensive testing, Samsung mini-
mizes the additional block failure rate, which is projected below 0.1% up until 1million program/erase cycles. Refer to the qualification
report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. In the
case of status read failure after erase or program, block replacement should be done. To improve the efficiency of memory space, it
is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The
said additional block failure rate does not include those reclaimed blocks.
K9F8008W0M-TCB0, K9F8008W0M-TIB0
NAND Flash Technical Notes (Continued)
Program Flow Chart
Write
Read
Program Error
*
No
Single Bit Failure
: Error Correcting Code --> Hamming Code etc.
Failure Mode
Program Failure
Erase Failure
Example) 1bit correction & 2bit detection
Write Address
or R/B = 1 ?
SR. 0 = 0 ?
SR. 6 = 1 ?
Write Data
Write 10H
Write 70H
Write 80H
Start
Yes
Yes
No
10
*
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
Status Read after Erase --> Block Replacement
Verify ECC -> ECC Correction
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
Detection and Countermeasure sequence
Program Completed
Wait for tR Time
Write Address
If ECC is used, this verification
operation is not needed.
Verify Data
Write 00H
Yes
FLASH MEMORY
or ECC Correction
No
Program Error
*