K9K1208D0C Samsung semiconductor, K9K1208D0C Datasheet - Page 6

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K9K1208D0C

Manufacturer Part Number
K9K1208D0C
Description
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K9K1208D0C-DIB0
Quantity:
125
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F8008W0M
DC AND OPERATING CHARACTERISTICS
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage, All inputs
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
Operat-
Current
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ing
Parameter
Burst Read Cycle
Program
Erase
Parameter
Parameter
SS
Symbol
I
OL
K9F8008W0M-TCB0
K9F8008W0M-TIB0
I
I
I
V
I
I
V
V
CC1
CC2
CC3
I
V
SB1
SB2
(R/B) V
I
LO
OH
LI
OL
IH
IL
Symbol
tcycle=80ns,CE=V
CE=V
CE=V
V
V
I
I
V
-
V
OH
OL
CC
TCB0
IN
OUT
OL
CC
SS
+0.3V which, during transitions, may overshoot to V
=2.1mA
=0 to 5.5V
=-400 A
=0.4V
=0 to 5.5V
IH
CC
:
, WP=0V/V
T
-0.2, WP=0V/V
Test Conditions
A
=0 to 70 C, K9F8008W0M
-
-
-
-
IL
CC
Min
(Recommended operating conditions otherwise noted.)
, I
2.7
0
OUT
Symbol
6
CC
T
T
V
I
BIAS
=0mA
STG
OS
IN
Min
-0.3
-
2.4
2.4
TIB0
8
Vcc = 2.7V ~ 3.6V
-
-
-
-
-
-
-
-
Typ.
0
-
:
T
Typ
10
10
A
5
5
5
-
-
-
-
-
-
-
=-40 to 85 C)
-0.6 to +7.0
-10 to +125
-40 to +125
-65 to +150
CC
Rating
+2.0V for periods <20ns.
V
5
CC
Max
0.6
0.4
10
10
10
50
1
10
10
-
-
+0.3
FLASH MEMORY
Max
5.5
0
Min
-0.3
2.4
2.4
Vcc = 3.6V ~ 5.5V
8
-
-
-
-
-
-
-
-
Typ
10
10
10
10
10
-
-
-
-
-
-
-
V
Unit
mA
CC
Max
V
0.8
0.4
C
C
20
10
20
50
1
10
10
-
-
+0.5
Unit
V
V
Unit
mA
mA
V
A

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