K9K1208D0C Samsung semiconductor, K9K1208D0C Datasheet - Page 14
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K9K1208D0C
Manufacturer Part Number
K9K1208D0C
Description
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9K1208D0C.pdf
(25 pages)
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* Input Data Latch Cycle
ALE
K9F8008W0M-TCB0, K9F8008W0M-TIB0
CLE
CE
WE
I/O
I/O
CE
RE
R/B
* Sequential Out Cycle after Read
0
0
~
~
7
7
t
ALS
t
RR
t
WP
NOTES : Transition is measured 200mV from steady state voltage with load.
t
DS
DIN 0
t
t
WC
REA
t
DH
This parameter is sampled and not 100% tested.
t
WH
Dout
t
RC
(CLE=L, WE=H, ALE=L)
t
REH
t
WP
t
DS
DIN 1
t
REA
14
t
DH
Dout
t
RHZ
t
WP
DIN 255
t
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
CHZ*
RHZ*