K9K1208D0C Samsung semiconductor, K9K1208D0C Datasheet - Page 11
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K9K1208D0C
Manufacturer Part Number
K9K1208D0C
Description
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9K1208D0C.pdf
(25 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Erase Flow Chart
NAND Flash Technical Notes (Continued)
*
Block Replacement
Erase Error
Buffer
memory
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
error occurs
No
Write Block Address
Erase Completed
or R/B = 1 ?
SR. 0 = 0 ?
SR. 6 = 1 ?
Write D0H
Write 70H
Write 60H
Start
Yes
Yes
No
11
Block B
Block A
Reclaim the Error
Read Flow Chart
When the error happens in Block "A", try to write the
data into another Block "B" by reloading from an exter-
nal buffer. Then, prevent further system access to
Block "A"(by creating a "invalid block" table or other
appropriate scheme.)
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00H
Start
Yes