K9K1208D0C Samsung semiconductor, K9K1208D0C Datasheet - Page 7

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K9K1208D0C

Manufacturer Part Number
K9K1208D0C
Description
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K9K1208D0C-DIB0
Quantity:
125
VALID BLOCK
NOTE :
1. The K
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
AC TEST CONDITION
(K9F8008W0M-TCB0:T
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
K9F8008W0M-TCB0, K9F8008W0M-TIB0
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles in the Same Page
Block Erase Time
invalid blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are
guaranteed though its initial number could be reduced. (Refer to the attached technical notes)
CLE
H
H
X
X
X
X
L
L
L
L
L
2. WP should be biased to CMOS high or CMOS low for standby.
K9F8008W0M
Parameter
Parameter
Item
ALE
X
IL
H
H
X
X
X
L
L
L
L
L
(1)
or V
may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
(
T
IH
A
Parameter
=25 C, V
A
=0 to 70
CE
X
X
X
H
L
L
L
L
L
L
L
CC
C
=5.0V, f=1.0MHz)
, K9F8008W0M-TIB0:T
Symbol
Symbol
N
C
C
1TTL GATE & CL=50pF(3.0V+/-10%)
1TTL GATE & CL=100pF(3.0V~3.6V)
VB
I/O
IN
WE
H
H
X
X
X
X
Vcc = 2.7V ~ 3.6V
0.4V to 2.6V
Test Condition
RE
V
H
H
H
H
H
H
X
X
X
X
V
IN
Min
251
IL
=0V
=0V
Symbol
7
t
A
t
PROG
Nop
BERS
=-40 to 85 C
0V/V
WP
X
X
H
H
H
X
X
H
H
L
CC
(2)
0.8V and 2.0V
Min
Typ.
Min
,
Value
Data Input
Sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
-
-
-
-
V
-
-
5ns
CC
=2.7V ~ 5.5V unless otherwise noted)
Read Mode
Write Mode
1 TTL GATE and CL = 100pF
Typ
0.25
2
-
FLASH MEMORY
Vcc = 3.6V ~ 5.5V
Max
Max
256
10
10
0.4V to 2.6V
Mode
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
Max
1.0
10
4
Blocks
Unit
Unit
pF
pF
cycles
Unit
ms
ms

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