K9K1208D0C Samsung semiconductor, K9K1208D0C Datasheet - Page 3

• Manufacturer Part Number: K9K1208D0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

Figure 1. FUNCTIONAL BLOCK DIAGRAM
Figure 2. ARRAY ORGANIZATION
K9F8008W0M-TCB0, K9F8008W0M-TIB0
v
v
CC
SS
8M : 4K Row
(=256 Block)
NOTE : A
2nd Cycle
CE
RE
WE
3rd Cycle
1st Cycle
Command
A
A
8
0
12
- A
- A
to A
19
7
19
I/O
A
A
A
: Block Address
16
0
8
0
256B Column
& High Voltage
CLE ALE WP
Control Logic
Command
X-Buffers
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Generator
Page Register
Register
256 Byte
I/O
A
A
A
17
1
9
1
I/O
A
A
A
10
18
2
2
I/O
A
A
8B Column
A
8 Byte
11
19
3
3
3
I/O
A
A
*X
12
4
4
I/O
Global Buffers
0
Page Register & S/A
(256 + 8)Byte x 4096
* : X can be V
I/O Buffers & Latches
~ I/O
I/O
A
A
*X
8M + 256K Bit
13
NAND Flash
5
5
7
Y-Gating
8 bit
ARRAY
1 Block(=16 Row)
(4K + 128)Byte
I/O
A
A
*X
IL
14
6
1 Page = 264 Byte
1 Block = 264 B x 16 Pages
1 Device = 264B x 16Pages x 256 Blocks
6
or V
IH
.
I/O
A
A
*X
= (4K + 128) Bytes
15
7
FLASH MEMORY
= 8.6 Mbits
7
Output
Driver
Column Address
Row Address
(Page Address)
v
v
CC
SS
I/0
I/0
0
7