K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 10

• Manufacturer Part Number: K9K1208Q0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

DC AND OPERATING CHARACTERISTICS
K9K1208Q0C
K9K1208D0C
K9K1208U0C
Stand-by Current(TTL)
Stand-by Cur-
rent(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All
inputs
Output High Voltage
Level
Output Low Voltage
Level
Output Low Current(R/B) I
Operat-
Current
ing
Parameter
Sequential
Read
Program
Erase
Symbol
OL
K9K1216Q0C
K9K1216D0C
K9K1216U0C
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
IH*
OH
LI
IL*
OL
1
2
3
1
2
tRC=50ns, CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9K12XXQ0C :I
K9K12XXD0C :I
K9K12XXU0C :I
K9K12XXQ0C :I
K9K12XXD0C :I
K9K12XXU0C :I
K9K12XXQ0C :V
K9K12XXD0C :V
K9K12XXU0C :V
OUT
IN
OUT
=0 to Vcc(max)
=0mA
=0 to Vcc(max)
IH
CC
, WP=LOCKPRE=0V/V
-0.2, WP=LOCKPRE=0V/V
Test Conditions
OH
OH
OL
OL
OH
OL
OL
OL
OL
IL
=100µA
=2.1mA
=100uA
-
-
-
=-100µA
=-400µA
=-100µA
=0.1V
=0.4V
=0.1V
(Recommended operating conditions otherwise noted.)
CC
10
CC
V
V
Min Typ Max Min Typ Max Min Typ Max
-0.4
V
-0.4
-0.3
-0.1
CCQ
CCQ
3
CC
-
-
-
-
-
-
-
-
1.8V
10
10
10
10
4
-
-
-
-
-
-
-
-
V
+0.3
+0.3
Vcc
±10
±10
0.4
0.1
20
20
20
50
CCQ
1
-
-
V
V
-0.4
V
-0.4
-0.3
-0.4
K9K12XXX0C
CCQ
CCQ
3
-
-
-
-
-
-
-
CC
-
2.65V
10
10
10
10
4
FLASH MEMORY
-
-
-
-
-
-
-
-
V
+0.3
+0.3
V
±10
±10
0.5
0.4
20
20
20
50
CCQ
1
CC
-
-
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
3.3V
10
10
10
10
10
-
-
-
-
-
-
-
-
V
+0.3
+0.3
±10
±10
V
0.8
0.4
30
40
40
50
CCQ
1
CC
-
-
Unit
mA
mA
µA
V