K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 18

• Manufacturer Part Number: K9K1208Q0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1208Q0C
K9K1208D0C
K9K1208U0C
Pointer Operation of K9K1216X0C(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is writ-
ten. A complete read operation prior to ’80h’ command is not necessary.
Table 3. Destination of the pointer
(1) Command input sequence for programming ’A’ area
(2) Command input sequence for programming ’B’ area
Command
00h
50h
’A’,’B’ area can be programmed.
It depends on how many data are inputted.
00h
50h
Only ’B’ area can be programmed.
Pointer position
256 ~ 263 word
The address pointer is set to ’A’ area(0~255), and sustained
The address pointer is set to ’B’ area(256~263), and sustained
0 ~ 255 word
K9K1216Q0C
K9K1216D0C
K9K1216U0C
80h
80h
Address / Data input
Address / Data input
spare array(B)
main array(A)
Area
10h
10h
18
Figure 5. Block Diagram of Pointer Operation
’00h’ command can be omitted.
00h
50h
’50h’ command can be omitted.
Pointer select
command
(00h, 50h)
(00h plane)
"A" area
256 Word
"A"
80h
80h
Address / Data input
Address / Data input
Pointer
FLASH MEMORY
(50h plane)
8 Word
"B" area
10h
10h
"B"
Page Register
Internal