K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 33

• Manufacturer Part Number: K9K1208Q0C
• Description: 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

CLE
CE
WE
CLE
CE
WE
ALE
I/Ox
K9K1208Q0C
K9K1208D0C
K9K1208U0C
2) Unlock
I/Ox
3) Lock-tight
WP
WP
- Command Sequence: Unlock block Command(23h) + Start block address + Command(24h) + End block address
- Unlocked blocks can be programmed or erased.
- An unlocked block’s status can be changed to the locked or lock-tighten state using the appropriate commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB(Least Significant Bit) than End blcok address.
- One block is selected for unlocking block when Start block address is same as End block address.
- Command Sequence: Lock-tight block Command(2Ch)
- Only locked blocks can be lock-tighten by lock-tight command.
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block that is lock-
tighten can’t have it’s state changed by software control, only by hardware control(WP low pulse input); Unlocking multi area is not
available
Unock Command
Lock-tight Command
2Ch
23h
K9K1216Q0C
K9K1216D0C
K9K1216U0C
Add.1
Start Block Address 3cycles
Add.2
Add.3
33
Unlock Command
24h
End Block Address 3 cycles
FLASH MEMORY
Add.1
Add.2
Add.3