K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 19

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K9K1208Q0C

Manufacturer Part Number
K9K1208Q0C
Description
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet

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K9K1208Q0C
K9K1208D0C
K9K1208U0C
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte(x8 device), 264word(x16 device) page registers are utilized as seperate buffers for this operation and the system design gets
more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during
the data-loading and reading would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
CLE
CE
WE
ALE
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
Start Add.(4Cycle)
Start Add.(4Cycle)
K9K1216Q0C
K9K1216D0C
K9K1216U0C
t
WP
t
CH
t
R
Data Input
19
I/O
CE
RE
0
~
15
CE don’t-care
CE don’t-care
t
CEA
Data Output(sequential)
t
REA
FLASH MEMORY
Data Input
out
t
OH
10h

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