K9K1208Q0C Samsung semiconductor, K9K1208Q0C Datasheet - Page 13

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K9K1208Q0C

Manufacturer Part Number
K9K1208Q0C
Description
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet

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K9K1208Q0C
K9K1208D0C
K9K1208U0C
AC CHARACTERISTICS FOR OPERATION
NOTE: 1. K9F5608Q0C tREA = 35ns.
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
WE High to RE Low in Block Lcok
Device Resetting Time
2. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
(Read/Program/Erase)
K9K1216Q0C
K9K1216D0C
K9K1216U0C
Symbol
t
t
WHR1
WHR2
t
t
t
t
t
t
t
t
t
t
t
t
REA
CEA
RHZ
CHZ
t
REH
CLR
RST
t
t
RR
WB
RC
OH
AR
RP
IR
R
K9K12XXD0C
K9K12XXU0C
K9K1208X0C
100
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
13
Min
K9K1216Q0C
100
10
10
20
40
60
15
20
60
0
-
-
-
-
-
-
-
K9K12XXD0C
K9K12XXU0C
K9K1208X0C
5/10/500
30/35
100
10
45
30
20
-
-
-
-
-
-
-
-
-
-
(1)
FLASH MEMORY
(2)
Max
K9K1216Q0C
5/10/500
100
10
40
55
30
20
-
-
-
-
-
-
-
-
-
-
(2)
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs

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